предварительный СПИСОК ПРИГЛАШЕННЫХ ДОКЛАДЧИКОВ

1. Avasthi Devesh, India

Studies on interaction of hydrogen with Pd based alloys and composites

2. Chen Deyang , China

Application of ion implantation in ferroelectric materials

3. Chernysh Vladimir, Russia

Effect of preferential sputtering during irradiation of alloys with atomic and cluster ions

4. Ćosić Marko, Serbia

The Morphological analysis of the rainbow scattering effect in proton transmission through graphene

5. Du Guanghua, China

Imaging of the irradiation effects in microelectronics

6. Dutt Shankar, Australia

Annealing of ion irradiation damage in amorphous silicon dioxide

7. Gogova Daniela, Bulgaria

Gallium oxide – a promising material for the next generation high-power electronics

8. Karmakar Prasanta , India

Large area isolated nano dot and wire formation by broad ion beam implantation

9. Kibalov D.S., Russia

Self-forming hard nanomask and its induced coherency

10. Lorenz Katharina, Portugal

Defect engineering in wide bandgap semiconductors

11. Martinez Rafael , Brazil

Slow Ion Irradiation of Complex Organic Molecules: radioresistance dependence on ion energy and temperature

12. Montanari Claudia, Argentina

Title of presentation will be available later

13. Popov Vladimir, Russia

Title of presentation will be available later

14. Rymzhanov Ruslan, Russia

Modification of surfaces and interfaces with swift heavy ions

15. Stepanov Andrey, Russia

Formation of nanoporous germanium layer by low-energy implantation with transition metal ions

16. Tőkési Károly, Hungary

Determination of Optical Properties of Solids from Reflection Electron Energy Loss Spectroscopy Spectra

17. Trombini Henrique, Brazil

Medium Energy Ion Scattering capabilities for characterization of nanostructures

18. Uglov Vladimir, Belarus

Surface erosion of multilayer nanostructured ZrN/Si3N4 films irradiated with helium ions

19. Volkov Alexander, Russia

Title of presentation will be available later

20. Voronkov Roman , Russia

Nonthermal effects in insulators under ultrafast electronic excitations